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The principal embodiments of implementing the circuit of serial access to flash-memory have been considered. The advantages and drawbacks of existing solutions have been analyzed. A new option of the circuit of serial access to flash-memory with eliminating the lacks inherent in the existing solutions has been presented.

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The main variants of simulation transistors with a floating gate have been reviewed. A new method for modeling the analog transistor with a floating gate, taking into account a discrete spectrum of the charge state on the floating gate has been presented. The method permits to reduce the modeling time, to lower the requirements to the resources (libraries and design tools) and provides the compromise accuracy of the calculation.

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