Persons

The results of the study on porous materials based on the metal oxides (FeO, ZnO, InO etc.) by photoluminescence and atomic force microscopy methods have been presented. The influence of the composition and structure of the metal oxide nanocomposites on the photoluminescence spectrum and optical transmission has been considered.

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The general-purpose polymers formation issues are solved using micro- and nanoelectronic technologies of new generation, for example a nanoimprint lithography. One of its subspecies, soft lithography, includes topology formation using soft master die fabricated by hard mold imprint. Therefore, engineering study of possibility of hard molds self-dependent fabrication for the purposes of optoelectronic data bus formation for new generation printed circuit boards using general-purpose polymer materials is a priority. In this work, to rationalize the purchasing cost of an expensive hard mold of soft lithography, an original technological process for a hard mold fabrication based on the SU-8 photoresist has been developed and implemented. During the performing of the proposed technological process, the reason for the negative slope (T-topping) formation of soft lithography hard mold walls made of SU-8 photoresist was determined. A series of cut-off UV filters for optical wavelengths less than 350 nm has been developed and fabricated to eliminate T-topping. Based on the UV radiation intensity experimental measurements data from the i -line mercury lamp of the automated alignment and exposure system EVG620 NT, the UV radiation intensity attenuation dependences on the functional layer thickness of the developed optical UV filter for 365 and 400 nm wavelengths are plotted. The developed UV filters application effectiveness has been proven due to T-topping elimination during the technological process of producing the soft lithography hard mold test topology. The use of soft lithography will make it possible in the future to create a new generation printed circuit boards with a built-in optoelectronic data bus in the form of a polymer planar optical waveguides array and optical input / output elements.

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For the formation of organic photosensitive structures two approaches are used. While using the first approach the photoactive elements of the layered type, in which the active layers are coated in turns and have a sharp heteroboundary, have been created. In the work, another approach, based on forming in the organic photosensitive structures of distributed (bulk) hetero-transition between metal phthalociane and fullerene, has been used. The influence of parameters of forming the nanocomposite layer «phthalociane:fullerene» on the optical and photoelectrical characteristics FTO/ZnPc:C/C/Al and FTO/ZnPc:C/C/BPhen/Al has been considered. The investigated samples have been created by the vacuum thermal deposition method. In the experiment 4 types of the structures with different composition of the active layers have been made. The configuration of the active layers has been changed by varying the evaporated substance mass. For the layer based on zinc phthalocianethe influence of the substrate preheating temperature on the quality of the deposited layers has been investigated and the optimum value of the given temperature has been revealed. The spectra of absorption, transmission and photosensitivity of created samples have been investigated. The transmission spectra contain 2 expressed regions of strong absorption, corresponding to fullerene and zinc phthalociane, respectively. It has been revealed how the change of the fullerene component fraction affects the transport and photoelectric parameters on the nanocomposite layers and structures. The optimum configuration of the active layers ZnPc:C/C has been established. It has been shown that implementation of an additional BPhen layer, blocking the holes, allows a significant increase of the fotoresponse and an extension of the investigated structure sensitivity range.

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