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The radiation stability of the AlGaN/GaN millimeter-wave signal converters, irradiated by neutron and gamma radiation, has been investigated. As the parameters for estimation of the stability the following characteristics have been chosen: the output microwave signal range, the conversion factor and total consumed current. The dependence of the consumed current on the absorbed dose and the sample temperature under gamma irradiation has been obtained. The effect of the neutron flux upon the characteristics has been found insignificant, though the gamma irradiation has resulted in a considerable increase of consumed current due to formation of the nitrogen donor vacancies, annealing of growth acceptor defects, strain relaxation and defects ordering. After 6 months the measurements have shown that the characteristics of the devices have recovered to initial values indicating the restoration of the original state of the substrate crystal structure.

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The development of the devices based on gallium nitride has become the priority direction, reflecting the world trends in the development of the microwave electronics. The use of the nanoheterostructures based on GaN for creating monolithic integrated circuits (MIC) makes it possible to realize the systems operating in a significantly wider range of temperatures, with a higher specific output power and efficiency as compared to the devices based on silicon and gallium arsenide. On the basis of nitride heterostructures a set of MMIC, intended for application in the receiver-transmitter modules with rigid restrictions for the mass-dimensional characteristics and power consumption, and the increased requirements for the resistance to the external and special factors, and operating in the frequency range of 57-64 GHz has been developed. The technical and operational characteristics of the specified products have been presented. The developed MIC can be used in harsh operating conditions. A brief description of the technological route and of the developed original design and technological solutions has been given. A sample of a single-chip transmitter-receiver module, capable of replacing the equipment 4-5 crystals of single-function MIC of the previous generation has been presented. The technology of forming nanoheterostructurs based on GaN permits to manufacture amplifiers MIC with high power and low noise coefficient, to integrate all components of the receiver-transmitter module on a single crystal.

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