Persons

The microwave transistors on a wide-zone semiconductor material - gallium nitride (HEMPT-transistors) permit to create the perspective radioelectronic systems. Therefore, the determination of relation between the parameters of the transistors structure and the characteristics of the microwave generators on HEMT-transistors is an actual problem. The connection between the Schottky barrier parameters of the transistor gate-drain system and the spectral power of the phase noise of microwave generators based on these transistors has been analyzed. The selection of the powerful 6-finger transistors of the X -band with the 0.25μm gate and the lead-out of metallization on the reverse side of the crystal and the field electrodes (FP) has been investigated. In measurement at the f < 500 kHz frequency the most part of the analyzed crystals the C-V -characteristics in the area of transition from enrichment to depletion had a characteristic peak, the height of which increased with the decrease of the measurement frequency. While measuring the noises level of the given selection of crystals of the transistors being a part of the microwave generator a stable correlation between the height of the characteristic capacitance peak on the C-V -characteristics and the level of spectral density of the phase noise power of the microwave generator, which included the given crystal, has been established.

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