Persons

The techniques for forming the nanoscale elements of gate of the power microwave transistor, based on the AlN/GaN heterostructures, have been developed. The optimal parameters of exposure of 950-polymethylmethacrylate (PMMA) and ELP-20 have been defined. The technological route of ion beam lithography using the multilayer resists has been developed and investigated. The technology for creating the grounded continuous metal mesh of the alignment marks above the resist, sensitive to ions, for visualizing the alignment marks on the dielectric substrate by ion microscopy method has been completed.

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