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The basic technology of the microelectronic devices radiation hardness prediction, estimation and measurement, which had proved the high scientific and practical value for all of design and production stages of special devices, has been described. The major directions to spread the basic technology sphere to space applications and modern microelectronic devices have been proposed.
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The adequacy of the laser based dose rate effects simulation in IC's may be disturbed due to metallization shadowing. It has been shown that the optical diffraction can limit the laser dose rate simulation at 0.18μm technology level.
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Based on the numerical electrothermal simulation the dependencies of the heating nature of the CMOS microcircuits elements, manufactured according to different technologies under single voltage pulse, caused by the electromagnetic radiations effect, have been determined. It has been shown that the dependence of the pulse electric hardness level (EHP) on the SPV duration for CMOS/SOS IC's is weaker than that one for CMOS microcircuits of the bulk or epitaxial technologies.
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