Persons

Two different effects of silicon oxide electrical conductivity switching have been considered. The differences are both, in the structure of the conductivity channels, and in the mechanisms of their creation and destruction. The effect of switching ReRAM based on SiO has been explained from point of view of SiO consideration as a supersaturated solid silicon solution in SiO. SiO ReRAM switching model is based on the field driven silicon bond breakage and their recovery due to thermal annealing.

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