Persons

The high voltage silicon transistors and diodes are used in the direct current sources, in the circuits for conversion of alternating current to direct current, in accumulative batteries as separate devices and in the circuits «bridge», «half-bridge» in the uncontrolled rectifiers. The main characteristic of such diodes is the blocking reverse voltage or the break-down voltage. The layout of the high-voltage part of silicon fast switching high power diodes for obtaining maximum blocking reverse voltage has been developed. For the calculation the standard TCAD programs into the editor of structures of which the created program had been integrated, have been used. This program permits to automate the calculations of the characteristics for devices with sizes of several millimeters. It has been shown that using the above presented principle for the periphery layout calculation it is possible to obtain high voltage diodes with different breakdown voltage, varying the number of rings. The layout has been developed so that the breakdown occurs under the edge of the active region. This guarantees the lack of catastrophic failures during the device operation. The high voltage fast switching diodes, manufactured using the proposed layout, have the maximum blocking reverse voltage in the range from 3.3 up to 6.7 kV, which indicates to the calculation methodology reliability.

• Counter: 1696 | Comments : 0