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Based on the numerical electrothermal simulation the dependencies of the heating nature of the CMOS microcircuits elements, manufactured according to different technologies under single voltage pulse, caused by the electromagnetic radiations effect, have been determined. It has been shown that the dependence of the pulse electric hardness level (EHP) on the SPV duration for CMOS/SOS IC's is weaker than that one for CMOS microcircuits of the bulk or epitaxial technologies.

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