Persons

The constructive and technological schemes of self-formation of completely self-combined vertically integrated transistor structures for ULIC have been presented. The exact positioning of the elements with nanometer sizes on a surface and at a certain depth of a silicon plate has been achieved due to the application of the self-conjugate pseudo lithographic composite masks. The critical places in the design and manufacturing techniques of the structures with the narrow and turned ultrathin emitter areas have been considered.

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