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A method for implementation of the integrated protection of bipolar transistors from the current overload in the control circuit based on a combination of the element with N-shaped volt-current characteristic (IVC) with a bipolar transistor has been considered. The features of the appliances implemented using this method are the presence of a static transfer N-shaped CVC, as well as one or more chains of positive feedback, which permits to restrain the operating input current and output voltage within the specified limits. Using this method will permit to create a semiconductor structure of bipolar transistors with the built-in protection against the current overload in the control circuit.

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A multifunction threshold positional-sensitive photoswitch with an S-shaped current-voltage characteristic has been suggested. It has been shown that the breakover voltage of such element depends on the spatial position of the light beam on its surface. The results of the mathematical modeling and experimental research of this instrument have been presented.

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