Persons

The contactless non-destructive method of charge free carrier concentration determination in monocrystalline samples of Cd HgTe solid solutions and multilayer epitaxial heterostructures on their base by far infrared reflection spectra has been suggested. On the reflection coefficient dependence, obtained at the room temperature, the characteristic point and the corresponding wave number have been determined. Using the calculated calibration curves the concentration value of heavy holes has been determined. It has been shown that in constructing the calibration curves it is necessary to take into account the plasmon coupling with longitudinal optic phonons.

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