Persons

The results of electron microscopy studies of a thin epitaxial aluminum layer on a misoriented gallium arsenide substrate are presented. It has been found that the layer consists of differently oriented domains and their crystal lattices coherently conjugate with the substrate forming misfit dislocations at the interface, as in the case of the layer grown on a singular substrate. Atomic steps on the substrate surface have been visualized and their influence on the growth of aluminum domains have been discussed.

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The results of the electron microscopy studies of a thin InAlAs epitaxial layer on the GaAs(100) substrate have been reported. The misfit dislocations at the heterointerface have been revealed, however, a residual strain has been found to exist in the layer, which distorts its lattice. By measuring the layer lattice parameters along the growth direction and perpendicular to it away from the misfit dislocations, the nominal lattice parameter has been locally calculated and the indium content has been found.

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