Structure of Thin Aluminum Layer Grown on Vicinal Surface of Gallium Arsenide Substrate Studied by High-Resolution Electron Microscopy

Structure of Thin Aluminum Layer Grown on Vicinal Surface of Gallium Arsenide Substrate Studied by High-Resolution Electron Microscopy

The results of electron microscopy studies of a thin epitaxial aluminum layer on a misoriented gallium arsenide substrate are presented. It has been found that the layer consists of differently oriented domains and their crystal lattices coherently conjugate with the substrate forming misfit dislocations at the interface, as in the case of the layer grown on a singular substrate. Atomic steps on the substrate surface have been visualized and their influence on the growth of aluminum domains have been discussed.
M.V. Lovygin
National Research University of Electronic Technology, Moscow
Nikolay I. Borgardt
National Research University of Electronic Technology, Moscow, Russia
M. Seibt
4 Physical Institute, Göttingen University (Germany)
I.P. Kazakov
P.N. Lebedev Physical Institute, Russian Academy of Sciences
A.V. Tsikunov
P.N. Lebedev Physical Institute, Russian Academy of Sciences
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