Persons
Cand. Sci. (Eng.), Assoc. Prof. of the Electronic Engineering Department, Moscow Institute of Electronics and Mathematics, National Research University “Higher School of Economics” (Russia, 123458, Moscow, Tallinnskayast., 34)
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An electro-thermal modeling of modern SiGe and Si bipolar transistor structures using TCAD Sentaurus Synopsys has been carried out. It has been shown that for SiGe heterojunction bipolar transistors, operating at high current density, the internal temperature is higher than for identical Si transistors. As a result a stronger degradation of the device parameters and electrical characteristics is observed.
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