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Some features of the 3D silicon structures formation by locally formation of porous silicon as a sacrificial layer have been studied. It has been formed by metal-assisted chemical etching of a single crystal wafer of Si with silver films (50 and 100 nm) as a catalyst. The influence of ionic Ag mass transfer, caused by the temperature gradient, on the surface morphology of the formed structure according to the linear size of the mask-catalyst has been determined.

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