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Irina A. Voloshchuk

National Research University of Electronic Technology (Russia, 124482, Moscow, Zelenograd, Shokin sq., 1)
PhD student, Engineer of the Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (Russia, 124482, Moscow, Zelenograd, Shokin sq., 1)

Daniil V. Bychkov

Moscow Institute of Radio Engineering, Electronics and Automation – Russian Technological University (Russia, 119454, Moscow, Vernadsky ave., 78); JSC Pluton (Russia, 105120, Moscow, Nizhnyaya Syromyatnicheskaya st., 11)
PhD student of the Nanoelectronics Department, Moscow Institute of Radio Engineering, Electronics and Automation – Russian Technological University (Russia, 119454, Moscow, Vernadsky ave., 78); Leading Process Engineer, JSC Pluton (Russia, 105120, Moscow, Nizhnyaya Syromyatnicheskaya st., 11)

Viktor Bordiuzha

National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
PhD student of the High Mathematics-1 Department, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Alexey E. Markov

Kaspersky Lab JSC (Russia, 125212, Moscow, Leningradskoe Hwy, 39a, bld. 3)
Developer, Kaspersky Lab JSC (Russia, 125212, Moscow, Leningradskoe Hwy, 39a, bld. 3)

Alexander V. Mangushev

Volgograd State Technical University (Russia, 400005, Volgograd, Lenin Ave, 28)
Student, Volgograd State Technical University (Russia, 400005, Volgograd, Lenin Ave, 28)
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