Persons

The distributions of the electrical potential in the bulk of the five-diode vertically integrated photo-receiving structure have been studied. The spectral photosensitivities of five regions of the conductivity different types have been obtained. The photo relaxation times for the above mentioned regions have been found.

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The numerical simulation of the vertically integrated photosensitive cell, intended for the matrix spectrum-selective photoelectric image converter, has been carried out. The constructive parameters and control voltages of the photocell as well as the electric potential distributions have been investigated. The surface concentrations of the accumulated photo carriers and the thermal relaxation times of the photocell p-n-p-n structure have been calculated.

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The analysis and the numerical calculation of the photorelaxation processes and spectral characteristics of photosensitivity of n- and p-type regions of the three-diode vertical integrated photocell have been performed. The dependencies of the photorelaxation times of the photocell n- and p-type regions on the length of absorbed optical radiation have been obtained.

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