Persons

The conventional metal connections cease to meet the growing demands of the quality of information transmission, speed and noise immunity. This is especially acute in the inter-core connections of ultra-large scale integrated circuits. One of the promising methods in solving this problem is using the integrated optical switching systems on the bases of the injection lasers with functionally integrated optical radiation modulators. The injection lasers enable the modulation of laser radiation by subpicosecond control pulses at the time-constant pump current and realization of sources and modulators of optical radiation in a single AB nanoheterostructure with heterojunctions of the second type. In this study the transport of the charge carriers in a functionally integrated laser modulator with internal frequency modulation of the generated optical radiation using the proposed two-dimensional diffusion-drift model and the numerical simulation technique has been studied. The results of numerical modeling of the charge carriers transport processes in a laser modulator have been obtained when the pump current is switched on and the control voltage is pulsed. The results of numerical simulation of the transient processes take into account the structural features, transport effects, the mechanisms of simulated and spontaneous radiative recombination, and the lifetime of photons. It has been shown that the maximum modulation frequency of laser modulation is determined by the subpicosecond time of the controlled spatial relocation of the charge carrier density maximums in the quantum wells of the laser modulator and the photon lifetime in a resonant cavity and corresponds to the terahertz range. To increase the maximum modulation frequency, it is necessary to decrease the photon lifetime in the active region of the laser-modulator to values less than 3 ps. The proposed model and numerical modeling technique allow the optimization of the parameters of the functionally integrated laser-modulator and providing the required values of the maximum modulation frequency of optical radiation, the modulation factor and the threshold pump current density.

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Some peculiarities of the controlled rearrangement of charge carriers in the nanostructures based on the tunnel-connected quantum regions, formed by GaAs/AlGaAs heterojunctions, have been considered. The results of numerical modeling of the wave function rearrangement dynamics have been discussed.

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A model of the injected lasers with the functionally integrated amplitude modulators of optical rays for the integrated switching systems has been proposed. The model takes into account the multi-dimensional distributions of electron, hole and photon densities in both active and contact regions of the laser-modulator. The method and the numerical modeling results have been considered.

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