Persons

The comparative analysis of conventional and new CMOS differential amplifier circuits (DA) has been conducted for the models of the CMOS transistors not exposed to the gamma-ray source with a cumulative dose of 1 Mrad. The analysis of results have shown that the best resistance to ionizing radiation (IR) has been observed for asymmetric DA with the self-bias circuits, for which the change of the amplification coefficient after exposure was less than 5%, the in-phase output signal bias was less than 0.1 V and of symmetric DA, built based on two asymmetric amplifiers with the counterphase input signals and independent static mode stabilization.

• Counter: 1289 | Comments : 0

The basics of modular logarithmetics over field GF(p) have been presented. The methods of the Gauss logarithm N variables calculation in the modular logarithmetics basis have been developed. The results of the modular logarithmetics architecture synthesis and their comparison with the binary analogs have shown a two times speed increase.

• Counter: 1327 | Comments : 0