Publication of the journal

The section is currently being updated

The comparative analysis of conventional and new CMOS differential amplifier circuits (DA) has been conducted for the models of the CMOS transistors not exposed to the gamma-ray source with a cumulative dose of 1 Mrad. The analysis of results have shown that the best resistance to ionizing radiation (IR) has been observed for asymmetric DA with the self-bias circuits, for which the change of the amplification coefficient after exposure was less than 5%, the in-phase output signal bias was less than 0.1 V and of symmetric DA, built based on two asymmetric amplifiers with the counterphase input signals and independent static mode stabilization.

124498, Moscow, Zelenograd, Bld. 1, Shokin Square, MIET, editorial office of the Journal "Proceedings of Universities. Electronics", room 7231

+7 (499) 734-62-05
magazine@miee.ru