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Журавлёв Дмитрий Владимирович

Article author

The algorithms and technique for calculation of the maximum values of components of the target current of MOP-transistor with the built-in channel of n-type depending on the topological norms of submicron and nanosize nanotechnologies for frequency transformation in presence of an intensive noise at its output have been developed. The calculation and the analysis of the spectral making components of intermediate frequency for the given amplitudes of a handicap, signal and generator have been carried out. The behavior of MOP-transistors with the built-in channel of the n-type, designed according to GPDK045 and GPDK0990, has been investigated.

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