Persons

On the basis of foreign literature during recent years and own experience the most important information on the silicon carbide defects, their cause and properties, the current level of research and the influence of the defects on the instrument characteristics have been presented by the authors.

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The data on the defects, existing in ingots and epitaxial silicon carbide, have been presented. The micropipes, the low-angle boundaries and the stacking faults have been considered.

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The comprehensive analysis of the problem of appearance of the carbon inclusions in the silicon carbide monocrystal during growing the silicon carbide ingots by the modified-Levy method (so called ingot graphitization) has been presented. It has been shown that the ingot graphitization process can not be caused by silicon deficiency in the growth cell, on the contrary, just an excess of silicon near the growth surface retards the rate of the ingot growth process and results in the intensive corrosion of the graphite fittings.

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