Main Defects in Ingots and Epitaxial Layers of Silicon Carbide II. Micropipes. Low-Angle Boundaries. Stacking Faults.Review

Main Defects in Ingots and Epitaxial Layers of Silicon Carbide II. Micropipes. Low-Angle Boundaries. Stacking Faults.Review

The data on the defects, existing in ingots and epitaxial silicon carbide, have been presented. The micropipes, the low-angle boundaries and the stacking faults have been considered.
Dmitriy D. Avrov
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg
Andrey O. Lebedev
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg; Ioffe Institute, Russian Academy of Sciences, St. Petersburg
Yuriy M. Tairov
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg
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