The data on the defects, existing in ingots and epitaxial silicon carbide, have been presented. The micropipes, the low-angle boundaries and the stacking faults have been considered.
Dmitriy D. Avrov
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg
Andrey O. Lebedev
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg; Ioffe Institute, Russian Academy of Sciences, St. Petersburg
Yuriy M. Tairov
Saint Petersburg State Electrotechnical University ETU-LETI, St. Petersburg