Persons

The reproducible technologies for creating the efficient method for suppression of the optical connection between the cells in silicon photoelectron multipliers have been experimentally studied and obtained. The mechanisms of the optical communication suppression have been considered and for each of them the influence value has been shown. The way of separation of the photosensitive cells based on etching of V-shaped trenches has been investigated. The principal possibility of optical cross-talk decreasing between the cells from 20-40% to 0.1-0.7% in the range of over bias 2-5 V, respectively, has been shown.

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The sensitivity and the initial offset of voltage between the collectors of the two-collector lateral bipolar magnetotransistor of npn-type with the base, formed in the well being the third collector (3KBMTBW) at the reduced rate of the surface recombination in the base, have been experimentally investigated. The magnetotransistor switch-on circuit determines the operation mode and the device parameters. It has been shown, that the magnetosensitivity of voltage achieves 11 V/T.

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The reproducible technologies for obtaining a negative tilt of the thick positive phototresist mask have been investigated for the lift off and electroplating applications. The possible variation range of the profile has been shown and the control mechanism of the mask tilt has been explained. The key parameters affecting the technological process have been investigated and the tolerances of these parameters from the nominal value have been specified.

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