Persons

The dependence of thermal characteristics of a tvs-diode in passing the pulsed overload has been investigated. The dependencies of the pulsed voltage limitations and current on time have been analyzed. Based on the analysis of the dependencies the thermal characteristics of tvs-diodes have been calculated. It has been shown that the parameters of the tvs-diode degrade, when the current density achieves 160 - 300 A/cm and the critical temperature - 250 - 300 °C. The dependencies of the heat resistance and the critical temperature on the voltage tvs-diodes density and pulse duration have been presented.

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The effect of electron irradiation on parameters of semiconductor diodes with a single current pulse passage has been studied. The results of the calculations and experimental studies of the electron irradiation effect on the electrical impulse strength have been presented. It has been shown that with the pulse width increase the decrease of the pulse amplitude value of the current, required to reach the critical temperature, occurs due to the thermal resistance increase.

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