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Head of the Research Laboratory of Advanced Element Base and Technological Routes of Microelectronics, SMC “Technological Center” (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1, bld. 7)
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The methods for calculation of the design-technological parameters of LDMOS transistor to obtain a consistent pair of the breakdown voltage (Vbd) values and the device resistance in the open state Ron have been presented.
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