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The description and the results of measuring the parameters of the integrated MOSFET for low-voltage applications have been presented. The preliminary calculation of the device has been verified in CAD ISE TCad. Based on the performed studies the conclusion about consistency and effectiveness of the proposed MOS transistor for low-voltage applications has been made.
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The peculiarities in operation of MOSFET with the electrically connected gate and pocket have been considered. Based on the investigations conducted in CAD Cadence IC an equivalent circuit of MOSFET has been formed.
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