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The results of the electron microscopy studies of a thin InAlAs epitaxial layer on the GaAs(100) substrate have been reported. The misfit dislocations at the heterointerface have been revealed, however, a residual strain has been found to exist in the layer, which distorts its lattice. By measuring the layer lattice parameters along the growth direction and perpendicular to it away from the misfit dislocations, the nominal lattice parameter has been locally calculated and the indium content has been found.

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