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The results of the studies on the thin films of ZnO:Ga, obtained by the magnetron sputtering of the corresponding target in argon and argon with 5% hydrogen without heating the substrate, have been presented. It has been shown that the resistivity and stability over time of the ZnO:Ga films depend on their thickness, the exposure to solar radiation and the external environment. It has been determined that the doping of the ZnO:Ga films by hydrogen can substantially reduce their resistivity and an increase the stability of the films in time can be achieved by the coating, that protects against the effects of the external gas environment.

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The ZnO thin film investigation results have been presented for MEMS integrated device use. It has been shown that the specific resistance and stability of ZnO:Ga thin films depend significantly on their thickness, solar radiation effect, and the external environment. The instability of the ZnO thin films is caused by the processes of generation and healing the oxygen vacancies, creating the donor levels in the ZnO band gap.

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