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The mode of ultra-high metal-insulator-semiconductor diode stressed-deformation materials hermetic assembly design, implemented based on the bond silicon membrane with two gold beam-leads under the effect of temperature and an increased atmospheric pressure, has been investigated. The construction is protected by various sealing materials based on lacquers, enamels and compounds. The recommendations on minimization of the stressed-deformation mode of connection of various materials by optimization of the design and technology of the diode have been developed.
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The main principles for simulation of the RFID-cards thermo-strength have been presented. The finite-element modes have been developed, the simulation results have been given and the influence of the constructive and technological factors on the stress-strain state has been investigated. The most significant factors of the identification cards thermo-strength have been determined.
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