Persons

The analytical model has been proposed and the simulation of the energy losses in IC sensitive microvolume of VLSI elements with the account of surrounding materials has been carried out. The developed model for the evaluation of the local radiation effects demonstrates a satisfactory conformity with the results of existing approaches.

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The basic technology of the microelectronic devices radiation hardness prediction, estimation and measurement, which had proved the high scientific and practical value for all of design and production stages of special devices, has been described. The major directions to spread the basic technology sphere to space applications and modern microelectronic devices have been proposed.

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The traditional approaches to the circuit simulation of the single-event effects in CMOS ICs are based on the use of the double-exponential model of ionization current pulse, which is not always applicable to devices with the sub-100 nm feature sizes. An overview of the main approaches to solving two main problems, arising in the circuit simulation of the single-event effects in sub-100 nm CMOS ICs: the dynamic interaction between the charge collection process and the fast circuit response and the impact of the charge collection by multiple sensitive nodes- has been presented. As a solution of the first problem, three main approaches have been considered, based on the use of, respectively, a piecewise linear current pulse shape based on TCAD simulation results, a dual double-exponential current source and a bias-dependent current source. The methods for circuit simulation of the ionization response of several elements from single HCP based on using the look-up tables and analytical models of the ionization response dependence on the particle hit place have been considered. The performed analysis of the up-to-date approaches to simulation of the failure effects and ionization noise pulses in CMOS microcircuits permits to conclude that the most flexible and physically precise approach is that one based on using the current source, taking into account the electric mode of the transistor and being built to the Verilog-A code of the initial model.

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The formation conditions and the methods to detect the multiple-bit upsets in static random access memory caused by single charged particles of space have been determined. The topical problems, which solution is necessary for development of the fault tolerant and reliable new generation space equipment, have been defined.

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The main technical characteristics of the automated radiation effects simulation facility based on the wavelength tunable solid state picosecond laser have been presented. Its design features, capabilities and advantages aimed at the simulation of the single event effects for the space environment in modern Si, GaAs, SiC, etc microelectronic devices have been discussed.

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The most commonly used methods and facilities for electronic component base SEE testing have been discussed. The main limitations of these methods and devices applicability have been presented. The recommendations on the choice of composition and sequence of the SEE tests have been given taking into account these limitations.

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