Persons

An algorithm for solving the inverse problem of photo conductivity decrease in the semi-infinite semiconductor sample (ingot) has been presented. For determination of the semiconductor recombination parameters: lifetime of minor charge carriers in the semiconductor bulk and the velocity of the surface recombination of the minor charge carriers on its surface the pulse exposure of the sample surface by light pulses of the finite duration has been applied.

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An optimal scheme for controlling the voltage applied to a solar cell displaced in the solar cell tester has been proposed. It has been shown that the application of the optimal law for controlling the displacement voltage under the short enough light pulse (6.5 ms) conditions permits to significantly reduce the deviation of the dynamic I-V characteristic from the ideal static one. This essentially improves the precision of determining the solar element inner parameters based on consideration of any electrical model.

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It has been shown that using the technology of the melt gettering by aluminum it is possible to reduce the concentration of oxygen, decreasing the efficiency of photoelectric devices. The optically active oxygen content has decreased to 5·10 cm - at the beginning of the monocrystal, to -----at the end with a simultaneous increase in the uniformity of its distribution over the length and cross-section of the ingot. The lifetime of the minority carriers has been more than three times increased. The primary effect of solar degradation efficiency of solar cells has demonstrated less than 2% decrease.

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