Persons

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For creating DRAM and flash-memory alternative of existing element base there are the memristive structures, based on resistance switching. In the paper the results of the study of formation features of creating the memristive structures based on copper sulfide as one of the promising materials, providing an increased efficiency of the structures, have been presented. Using a scanning electron microscope the process of the copper sulfurization in the «chemical bath», in which the near-surface region of the copper layer was transformed to sulfurization and the rest part of the layer was used as an active electrode of the formed further memristive structure, has been considered. It has been shown that with increased concentrations of the initial chemical reagents the roughness of the sulfide layer surface significantly increases. The sulfide growth speed with optimal initial concentrations of the chemical reagents is ~ 30 nm/min. In the investigation of the memristive structures it has been found that with increasing the copper sulfide thickness the resistance ratio in the low-resistance and high-resistance states grows from 11.2 to 12.5. The switching time in the formed memristor structures from the high-resistance state to the low-resistance one is about 1.3 µs, and from the low-resistance to high-resistance state it is 0.9 µs.

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Nowadays, one of the priority directions of development of electronics both in our country and abroad is the creation of silicon semiconductor devices and IC with the submicron topological dimensions capable of functioning at temperature 200 °C and higher. Metallization is a critical node of the silicon electronic component base from the point of view of thermal stability. Recently, as an interconnection material tungsten, which has higher electromigration resistance compared with aluminum (with silicon and copper additives) is used. In the work the results of the technological regimes research of W(Ti-15 %) alloy films magnetron sputtering have been presented. During investigating the mechanical properties of the films it has been determined that the structure W(Ti-15 %)-Si is characterized by a lower level of mechanical stresses in lateral direction compared to the built-in mechanical stresses in the W-Si structure. It has been revealed that the full force of the film of tungsten with titanium alloy approximately three times exceeds that one of the tungsten film. It has been shown that the metallization based on tungsten alloyed with titanium is characterized by a significantly higher elctromigration resistance compared to metallization based on an alloy of aluminum with copper and silicon. The results based on a comparative analysis of the electric-physical and mechanical characteristics of sputtered on silicon tungsten films and the alloy of tungsten with titanium from the point of view of using them as interconnections in heat-resistant silicon IC have confirmed their promising implementation.

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The process of plasma etching of the passivation SiN-SiO structure, which provides to obtain the etching anisotropic profile, has been developed. The influence of various operation parameters, such as the gas mixture consumption and HP power on the technological characteristics of the plasma etching process of silicon nitride and oxide dielectric layers, has been considered. The correlation of the main technological characteristics of this process with the operation parameters has been determined.

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