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Depending on the choice of technology for manufacturing the CuIn GaSe films the scattering of electrical-and photoelectrical of the photo converters parameters is observed, which in the first turn is related to the microstructure formed in the films and their phase composition. The study on the phase division processes and the formation of the one-phase film CuIn GaSe is the key moment in manufacturing high quality absorbing layers. Thin films of CuInGaSe have been prepared by the two-step selenization of the preliminary synthesized Cu-In-Ga- layers of different thickness in a temperature interval 350 ≤ T ≤ 550 °C. The surface morphology, the chemical composition and the structure of the synthesized CuInGaSe films have been studied using the electron microscopy, the X-ray powder diffraction and the X-ray fluorescence methods. It has been determined that the synthesized films are polycrystalline, have developed surface and the crystalline medium size of 50-140 nm. The minimum initial selenization temperature and the minimum thickness of the metal layer, required to prepare CuInGaSe thin film, have been defined from the statistical analysis of the electron microscopy data.

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