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Thermoelectric generators are used as alternate power sources, among others for waste heat conversion to electrical energy. In the design of thermoelectric generators the problem arises of effective contacts creation for commutation legs in a thermoelement and sections made of various thermoelectric materials in a multi-section thermoelement. In this work, the impact of contacts resistivity on efficiency of thermoelements is shown in the modeling process using developed technique. It was established that for effective operation of thermoelements, the contacts resistance should not exceed 10–8 Ohm∙m2. Contact systems based on Ni-P and Co-P alloys were formed by chemical deposition of metals from a solution of sodium hypophosphite on the branches of thermoelements. The surface of thermoelectric materials with roughness of 300 nm, 500 nm and 700 nm, which changes the true contact area of formed contact systems, was studied. Upon measurement results it has been established that with a surface roughness of 700 nm, thermoelement resistance decreases by 7.8 % compared to contacts formed on a surface with a roughness of 300 nm, which increases the efficiency of thermoelements.

Key words: thermoelement, contacts, chemical deposition, contact resistance, efficiency
Published in: Technological processes and routes
Bibliography link: Korchagin E. P., Nagreshnikov E. V., Shtern M. Yu., Rogachev M. S., Mustafoev B. R., Shtern Yu. I. Research of factors impacting contact resistance in thermoelements. Proc. Univ. Electronics, 2023, vol. 28, no. 6, pp. 773–783. https://doi.org/10.24151/1561-5405-2023-28-6-773-783. – EDN: OAQXKU
Financial source: the work has been performed under state assignment (Agreement FSMR-2023-0014).

Egor P. Korchagin
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Evgeny V. Nagreshnikov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Maxim Yu. Shtern
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Maxim S. Rogachev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Bekhzod R. Mustafoev
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

Yuri I. Shtern
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1

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UDK: 537.322
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DOI: 10.24151/1561-5405-2023-28-6-773-783
RISC id: OAQXKU

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