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The transition to the macro- and nanosized elements in semiconductor electronics significantly increases the contribution of the surface layers to physico-chemical properties of materials. In its turn, the surface characteristics are affected, for example, by the adsorption processes from gaseous medium, the interest in which in recent years has significantly increased with the development of catalysis and thin-film electronics. In connection with this studying the process of the oxygen adsorption and of its interaction with the surface of polycrystalline silver is urgent. In the work by in situ methods the surface layers of the polycrystalline silver, subjected to external action by the activated oxygen from various sources, have been investigated. As the activated oxygen sources the water vapors at 1073 K temperature and the ion source, permitting to obtain a beam of the oxygen ions with 100-300 eV (5mcA/cm) energy have been used. It has been found that after processing in the surface and near-surface layers of silver, in addition to atomic oxygen in the composition of AgO and AgO, also, molecular oxygen and silver in zero-valence state had been present. An estimate of the ratio of the intensities of the component peaks of silver and oxygen has made it possible to conclude that there are the associative forms of oxygen in the silver surface layers. An increase in the spin-orbit splitting for Ag 3 d -Ag 3 d has been recorded, indicating the presence of the oxidized nanoparticles on the surface.
  • Bibliography link:
Oleg G. Ashkhotov
Berbekov Kabardino-Balkarian State University, Nalchik, Russia

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