To increase the functioning operating range of CMOS LSI, designed according to the radiation-resistant technology SOS, an increase of the breakdown voltages pf the N-channel MOS transistors is required. The results of the construction modernization a...
The main variants of simulation transistors with a floating gate have been reviewed. A new method for modeling the analog transistor with a floating gate, taking into account a discrete spectrum of the charge state on the floating gate has been prese...
The mathematical model of the gamma-percentile operating life of the optical cables, taking into account the dependency of the constructive-technological parameters, regimes and conditions of their application, has been considered. The possibility of...