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Articles

  • The developed technologies of CMOS structures and nonvolatile memory based on them will encounter the fundamental limits already in 2018-2020. Currently, an intensive research is being executed for obtaining the new devices based on new physical prin...

Authors: Alexey N. Belov, Alexey A. Perevalov , Vasily I. Shevyakov
305 - 321
  • The electro-physical properties of silicon limit its application for opto-electronic elements and for microwave technology devices. In this case silicon is replaced by the material with higher band gap. These materials include the nitrides of the III...

Authors: Evgeny N. Vigdorovich
322 - 330
  • Production CMOS technology node shallow trench isolation (STI) etching process control has been discussed in the present paper. It has been shown that optical scatterometry can be adopted for that in order to increase throughput and informativity of ...

Authors: Alexander D. Volokhovskiy, Nikolay N. Gerasimenko , Dmitry S. Petrakov
331 - 340
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