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The study of the structural and electrophysical properties of piezoelectrics is an important task for the creation of efficient piezoelectric nanogenerators designed to increase the autonomy of electronic devices. One of promising materials for nanogenerator creation is barium titanate BaTiO3. Special sample preparation is required to study its properties. In this work, the results of studying the electrical properties of an individual BaTiO3 nanowire attached to the substrate surface using atomic force microscopy are presented. The BaTiO3 nanowires have been formed by two-stage hydrothermal synthesis using titanium dioxide TiO2 as a precursor and sodium titanate an intermediate. The surface morphology and phase composition of BaTiO3 nanowires were studied using a scanning electron microscope and X-ray diffraction. A technique for fixing an individual nanowire on a conductive substrate for studying piezoelectric characteristics using an atomic force microscope is presented. The BaTiO3 nanowires obtained have a tetragonal phase with an average length of ~ 14 μm and a diameter of 330 nm. The internal voltage of the nanowire is –0.45 V. The piezoelectric coefficient d33 is 5.2 pm/V. The resulting data confirm the possibility to apply BaTiO3 nanowires in nanogenerators and MEMS-devices.
  • Key words: BaTiO3, nanowires, atomic force microscope, piezoeffect, hydrothermal synthesis
  • Published in: ELECTRONICS MATERIALS
  • Bibliography link: Tarasov A. M., Dubkov S. V., Zung Vu Van, Kiselev D. A., Sirotina A. P., Volkova L. S., Ryazanov R. M., Gromov D. G. Investigation of the structural and electrophysical properties of barium titanate nanowires produced by the hydrothermal synthesis. Proc. Univ. Electronics, 2023, vol. 28, no. 2, pp. 151–163. https://doi.org/10.24151/1561-5405-2023-28-2-151-163
  • Financial source: the work has been supported by the Russian Science Foundation (project No. 22-19-00654).
Andrey M. Tarasov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Sergey V. Dubkov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Zung Vu Van
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Dmitry A. Kiselev
National University of Science and Technology “MISiS”, Russia, 119049, Moscow, Leninsky ave., 4
Anna P. Sirotina
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Russia, 199334, Moscow, Leninsky ave., 32A
Lidiya S. Volkova
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Russia, 199334, Moscow, Leninsky ave., 32A
Roman M. Ryazanov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; SMC “Technological Centre”, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Dmitry G. Gromov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; FSAEI HE I. M. Sechenov First MSMU MOH Russia (Sechenovskiy University), Russia, 119435, Moscow Bolshaya Pirogovskaya st., 2, bld. 4

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