The centrifuging method is advantageous in manufacture, for instance, of films with large area and/or of large thickness of several microns, but for chalcogenide compounds it is not commonly used yet, because they have relatively weak solubility in most solvents. Therefore, the search for the optimal conditions of preparing the solutions of chalcogenide compounds and manufacturing films by the centrifuging method currently is an urgent problem. The features of the amorphous arsenic sulfide (AsS) films prepared by the method of centrifuging the solution in n-butylamine have been investigated. The synthesized films have been characterized using the X-ray diffraction, IR spectroscopy, atomic force microscopy (AFM) and the Raman scattering. It has been shown that the amorphous films AsS are characterized by an increased index of the elasticity modulus compared to the films of an analogous composition, prepared by the film thermal deposition and by AsS glass. To explain the obtained experimental results, a structural model, built on the basis of arsenic sulfide clusters, the surfaces of which are limited by the negatively and positively charged ions, has been used. Direct conductivity (d.c.) studies have shown that the amorphous films exhibit a semiconductor conductivity character, while they have conductivity at room temperature of ~10 S/cm, which indicates to good dielectric properties. The prepared films have an optical transparency beginning from the yellow wavelength range, which makes them promising functional materials for technical applications in optics and photonics.
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