The investigation results of the study on the dependencies of the electric features of the SOI structure based field Hall sensor (FHS) on the technology parameters have been presented. The technology flow simulation of forming the magneto-sensitive structure, representing a field Hall sensor based on the MOS transistor in the SOI structure (FHS-SOI), has been performed. The FHS-SOI electric features have been calculated and the influences of the formation technological parameters on the voltage-current characteristics and the FHS-SOI sensitivity have been investigated.
L.N. Dolgyi
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
I.Yu. Lovshenko
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
V.V. Nelayev
Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus