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Izvestiya Vysshikh Uchebnykh Zavedenii. Elektronika

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Modern approach to cargo transportation evaluation consists in continuous collection of such object data as nature and level of diverse effects while in operation, and their intensity. In the process of impact indication various types of devices are used, from destructive sealing to complex inertial systems. A need arises to design a device that can report the exceeding of allowable acceleration or the cargo exposure to impact action. An example of such a device would be an impact sensor. In this work, the developed design of the micromechanical impact sensor KMG-1 and the principle of its operation are presented. A silicon-on-insulator structure with the (111) orientation of working layer was used as material for sensitive element manufacturing. The main stages of the technological process of manufacturing a prototype of micromechanical impact sensor using Bosch process and eutectic soldering are considered. The parameters of deep etching of silicon were set. The etching process has been adjusted to reduce the effect of ready structures undercut on the line of device layer - insulator division. The parameters of silicon patterns eutectic soldering have been selected. It was shown that the use of proposed technological process allows obtaining a tolerance for a response level from 10 to 50 %. The developed micromechanical impact sensor KMG-1 can be applied to fix various impact actions during cargo transportation.
Elena S. Kochurina
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Anatoliy I. Vinogradov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Leonid R. Boev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Nikolay M. Zaryankin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Stepan A. Anchutin
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Ilya S. Dernov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1); “Laboratory of Micro-Devices” LLC (Russia, 124527, Moscow, Zelenograd, Solnechnaya alley, 6)
Sergey P. Timoshenkov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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