Persons

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The dependencies of deep silicon etching performances on the process parameters have been investigated. To find the optimal recipes, which provide a high selectivity to a mask and the ARDE decrease, the method of planning the multifactorial experiments has been utilized. The investigation results have been used for manufacturing the MEMS real structures.

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ICP plasma-chemical reactor of ICP type has been investigated using the plasma diagnostics probe methods. The evaluation of the plasma density in the substrate area with the different process parameters has been performed. The potential self bias on the surface of glass substrates with different thickness, and the uniformity of the ion current density distribution over the plate diameter, have been measured. The recipe of the deep silicon etching with high uniformity on the whole substrate has been found.

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