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The magnetron sputtering device (MSD) is intended for sputtering material in a vacuum and its subsequent deposition onto semiconductor wafers. To form thin films with good uniformity on large-diameter wafers (200 mm and larger), MSDs with a rotating magnetic system of a specific shape are currently used. These MSDs allow sputtering of large-diameter targets in such a way that the required uniformity of the deposited films is ensured on the wafers located at the required distance from the MSD. In this work, the existing methods for calculating magnetic systems used in MSDs of various configurations are analyzed. A procedure for simulating a magnetic system of a certain shape is proposed for its further use in MSDs with a rotating magnetic system. The simulation of such magnetic systems will allow for a more accurate determination of their design, with account for the requirements for the uniformity of target erosion or the uniformity of film deposition. The performance criteria of the MSD investigated in this work were the presence of a magnetron discharge, the correspondence of the actual discharge forms and the erosion zone of the target to the computation date. Experiments have established that the developed model makes it possible to estimate with sufficient accuracy the plasma burning zone and the boundaries of target erosion, as well as the operability of the MSD with the given magnetic system.
Viktor I. Cherkunov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; JSC NPP ESTO, Russia, 124498, Moscow, Zelenograd, Georgievsky ave., 5, bld. 1
Anastasia V. Los
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Lyudmila A. Kuzmina
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; JSC NPP ESTO, Russia, 124498, Moscow, Zelenograd, Georgievsky ave., 5, bld. 1

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