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Currently a significant number of planar sensor devices have been developed to regulate solid and liquid materials permittivity in microwave range. Methods based on the direct location of the test sample on the microstrip require a more accurate account of the interaction of the electromagnetic wave propagating along the microstrip with the test sample. In particular, the distribution of the electric field strength of the resulting standing wave along the photonic crystal should be considered, depending on its structure, for example, when making a disturbance in the form of a changed length of one of the microstrip sections. In this work, the possibility of using microstrip photonic crystals to regulate the solid materials permittivity was theoretically validated and experimentally confirmed. The frequency responses of open microwave photonic structures with a periodically changing microstrip line width were calculated with Ansys HFSS software. The authors studied the defect modes characteristics in the first and second band gaps depending on the permittivity of samples, located on the microstrip line, the defect structure, and the sample location. The frequency responses of the microstrip photonic crystal model fabricated by photolithography were measured with vector network analyser in the 0.01–12.0 GHz frequency range. The dependence of the defect mode frequency on the location of a sample with a fixed permittivity within the photonic crystal defect was experimentally confirmed. The nature of the sample thickness effect on the defect mode frequency of the photonic crystal was determined. According to the obtained results, it has been possible to utilize the microstrip photonic crystals, featured by high manufacturing efficiency, as sensor circuits with controlled characteristics for permittivity regulation.

Key words: microstrip line, photonic crystal, defect mode, permittivity
Published in: MICRO- AND NANOSYSTEM TECHNOLOGY
Bibliography link: Skripal A. V., Ponomarev D. V., Kuznetsova A. N. Microstrip photonic crystals sensors for materials permittivity regulation. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2026;31(4):461–471. (In Russ.). DOI: 10.24151/1561-5405-2026-31-4-461-471.XZDTGB
Financial source: the work has been supported by the Russian Science Foundation (grant no. 25-22-00199).

Alexander V. Skripal
Saratov State University, Russia, 410012, Saratov, Astrakhanskaya str., 83

Denis V. Ponomarev
Saratov State University, Russia, 410012, Saratov, Astrakhanskaya str., 83

Anastasia N. Kuznetsova
JSC NPP “Almaz”, Russia, 410033, Saratov, I. V. Panfilov st., 1A, bld. 1

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UDK: 621.372.2: 621.315.61
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2026-31-4-461-471
RISC id: XZDTGB

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