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Anodization of transition metals is an effective method for manufacturing of nanostructured oxides with a high aspect ratio, such as porous aluminum or titanium oxide. However, when synthesizing porous tungsten oxide, the formation of such layers implies difficulties due to diffusion limitations: hindered delivery of reactants and removal of reaction products during the electrochemical oxidation of tungsten. The technological modes of tungsten anodization allowing formation of porous WOx layers with a high specific surface area are scarcely represented in the literature. Existing sources do not consider the effect of hydrodynamic conditions, including electrode rotation, on the growth kinetics of porous tungsten oxide. In this work, the effect of hydrodynamic conditions during tungsten anodization on the growth kinetics and morphology of the porous tungsten oxide WOx using a rotating disk electrode cell is investigated. The morphology of the obtained anodic oxide layers was studied using scanning electron microscopy, and it was shown that, within the range of tungsten electrode rotation speeds of 500–750 rpm, it is possible to form porous WOx structures with pore diameters of 40–70 nm and a high specific surface area. It has been demonstrated that such oxide structures exhibit the highest photocatalytic activity compared to samples obtained at other electrode rotation speeds.

Key words: tungsten oxide, rotating disk electrode, nanomaterials, photocatalytic coatings
Published in: ELECTRONICS MATERIALS
Bibliography link: Nazarkina Yu. V., Shitova D. D., Dronov A. A., Eganova E. M. Research on effect of hydrodynamic conditions during anodic tungsten oxide formation on its morphology and pho-tocatalytic properties. Izv. vuzov. Elektronika = Proc. Univ. Electronics. 2025;30(5):575–585. (In Russ.). https://doi.org/10.24151/1561-5405-2025-30-5-575-585.
Financial source: the work has been supported by the Ministry of Education and Science of Russia within the framework of the state assignment (Agreement FSMR-2023-0003).

Yulia V. Nazarkina
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Darya D. Shitova
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Aleksey A. Dronov
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Elena M. Eganova
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (Russia, 115487, Moscow, Nagatinskaya st., 16A, bld. 11)

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Information about the publication

UDK: 544.653.23:546.786
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2025-30-5-575-585
RISC id: YMTSVO

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