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A 1.8-GHz low noise amplifier for wireless telecommunication systems, developed using the 180-nm CMOS technology, has been offered. An example of architecture of the narrow bandwidth high frequency low noise amplifier using the noise cancellation method has been considered. In order to improve the matching of the impedances at the input on the narrow band a narrow band matching circuit in the option with low quality factor on-chip inductors has been implemented. The developed amplifier provides the gain of 24 dB, the noise figure of 2.7 dB and the reflection coefficient S11 - 25 dB.

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