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Anastasia V. Kirillova

National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1; “Research Institute of Molecular Electronics” JSC, Russia, 124460, Moscow, Ze-lenograd, Akademik Valiev st., 6, bld. 1
PhD student of the Integrated Electronics and Microsystems Department, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1), Design Engineer, “Research Institute of Molecular Electronics” JSC (Russia, 124460, Moscow, Zelenograd, Akademik Valiev st., 6, bld. 1)

Aleksey V. Timakov

National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
PhD student of the Integrated Electronics and Microsystems Department, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Anna P. Sirotina

Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences, Russia, 199334, Moscow, Leninsky ave., 32A
Cand. Sci. (Chem.), Scientific Researcher of the Development and Research of Micro- and Nanosystems Department, Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences (Russia, 199334, Moscow, Leninsky ave., 32A)

Dmitry A. Kiselev

National University of Science and Technology “MISiS”, Russia, 119049, Moscow, Leninsky ave., 4
Cand. Sci. (Phys.-Math.), Head of the Physics of Oxide Ferroelectrics Laboratory, National Research Technological University “MISiS” (Russia, 119049, Moscow, Leninsky ave., 4)

Zung Vu Van

National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1
Master’s degree student of the Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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