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The expressions, which permit to determine the electric potential distributions in anisotropic semiconductor samples of a rectangular form, have been presented. Practically important cases, when the sample being studied is on the metal semiconductor or dielectric substrate, have been considered.
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In the work based on a mathematical model the technique of the Hall coefficient measurement in square anisotropic semiconductor plates and films the probe technique has been justified. As a result of the qualitative analysis the mathematical expressions for the Hall field potential in the sample have been obtained. The recommendations for using the offered measurement techniques have been given.
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